Title :
Numerical analysis of a novel MTJ stack for high readability and writability
Author :
Raychowdhury, A. ; Augustine, C. ; Somasekhar, D. ; Tschanz, J. ; Roy, K. ; De, V.
Author_Institution :
Circuit Res. Lab., Intel Corp., Hillsboro, OR, USA
Abstract :
A novel MTJ stack employing a bidirectional switching mechanism has been proposed. By using a pulsed bidirection current, an MTJ with a SAF free layer and AP fixed layers can be switched through a metastable ferromagnetic state. Numerical simulations suggest high readability (like single barrier structures) and writability (like double barrier structures) of the proposed device.
Keywords :
ferromagnetic materials; magnetic tunnelling; numerical analysis; random-access storage; AP fixed layer; MTJ stack; SAF free layer; bidirectional switching mechanism; magnetic tunneling junction stack; metastable ferromagnetic state; numerical analysis; pulsed bidirection current; readability; spin torque transfer RAM cell; synth antiferomagnetic free layer; writability; Current density; Magnetic tunneling; Magnetization; Switches; Switching circuits; Torque; Tunneling magnetoresistance;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044163
