Title :
A low cost multi quantum SiGe/Si/Schottky structure for high performance IR detectors
Author :
Kolahdouz, M. ; Östling, M. ; Radamson, H.H.
Author_Institution :
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden
Abstract :
SiGe(C)/Si(C) multi quantum wells (MQWs) individually or in series with a Schottky diode (SQW) have been characterized as the thermistor materials for high performance bolometer application. The thermal response of the thermistor materials is expressed in temperature coefficient of resistance (TCR) and an excellent value of 6%/K is obtained for the SQWs. The noise power spectrum density was also measured and the K1/f was estimated as low as 4.7×10-14. The outstanding characteristics for the SQWs are due to low defect density and high interfacial quality in the multilayer structures. These results are very promising for the rising market of low cost IR detectors in the near future.
Keywords :
Ge-Si alloys; Schottky diodes; infrared detectors; semiconductor materials; semiconductor quantum wells; Schottky diode; SiGe-Si; high interfacial quality; high performance IR detectors; low cost multiquantum structure; low defect density; multiquantum wells; temperature coefficient of resistance; thermal response; thermistor materials; Detectors; Noise; Quantum well devices; Schottky diodes; Silicon; Silicon germanium; Thermistors;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044168
