Title :
Ka-band ultra low noise MMIC amplifier using pseudomorphic HEMTs
Author :
Fujimoto, S. ; Katoh, T. ; Ishida, T. ; Oku, T. ; Sasaki, Y. ; Ishikawa, T. ; Mitsui, Y.
Author_Institution :
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
A Ka-band monolithic low noise two stage amplifier has been developed using an AlGaAs-InGaAs-GaAs pseudomorphic HEMTs with a gate length of 0.15 /spl mu/m. For a superior noise figure, the MMIC was optimized by inserting a low loss resonator type stabilizing circuit without sacrificing the gain performance. The amplifier has achieved a 1.0 dB noise figure with an associated gain of 18.0 dB at 32 GHz. These results are the best of AlGaAs-InGaAs-GaAs P-HEMT MMICs ever reported to date.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; circuit stability; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; millimetre wave amplifiers; 0.15 micron; 1 dB; 18 dB; 26 to 32 GHz; AlGaAs-InGaAs-GaAs; EHF; Ka-band; MMIC LNA; P-HEMT; low loss resonator type stabilizing circuit; monolithic two stage amplifier; pseudomorphic HEMTs; ultra low noise amplifier; Circuit noise; Circuit stability; Feedback circuits; Frequency; Low-noise amplifiers; MMICs; Noise figure; PHEMTs; Performance gain; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.604417
