Title :
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
Author :
Zhao, Q.T. ; Yu, W.J. ; Zhang, B. ; Schmidt, M. ; Richter, S. ; Buca, D. ; Hartmann, J. -M ; Luptak, R. ; Fox, A. ; Bourdelle, K.K. ; Mantl, S.
Author_Institution :
Peter Grunberg Inst. 9 (PGI 9), Forschungszentrum Juelich, Grunberg, Germany
Abstract :
We report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si0.5Ge0.5 source. The device shows good performance with an average subthreshold swing S of 80mV/dec over a drain current range of more than 3 orders of magnitude. We observed that an applied back-gate bias increases the on-current by a factor of 1.6, and improves the off-current and the subthreshold swing (S). Low temperature measurements show a slightly temperature dependent S, characteristic for a tunneling dominated device.
Keywords :
Ge-Si alloys; field effect transistors; semiconductor materials; silicon; tunnelling; Si0.5Ge0.5; drain current range; n-channel tunneling field-effect transistor; strained Si channel; subthreshold swing; temperature measurement; tunneling dominated device; Logic gates; Silicon; Silicon germanium; Temperature; Temperature measurement; Transistors; Tunneling;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044187
