• DocumentCode
    1729901
  • Title

    A pressure sensor based on a HBAR micromachined structure

  • Author

    Baron, T. ; Gachon, D. ; Romand, J.P. ; Alzuaga, S. ; Ballandras, S. ; Masson, J. ; Catherinot, L. ; Chatras, M.

  • Author_Institution
    Dept. Time & Freq., Univ. de Franche-Comte, Besancon, France
  • fYear
    2010
  • Firstpage
    361
  • Lastpage
    364
  • Abstract
    In this work, we propose a pressure sensor fabricated on compound LiNbO3/Silicon/Silicon substrates obtained by Au/Au bonding at room temperature and double face lapping/polishing of LiNbO3/silicon stack and a final gold bonding with a structured silicon wafer. Sensitivity of the final sensor to bending moments then is tested and results show pressure sensitivity of such devices.
  • Keywords
    gold; lithium compounds; pressure sensors; HBAR micromachined structure; LiNbO3-Au-Si-Si; bending moments; gold bonding; pressure sensitivity; pressure sensor; silicon wafer; Acoustics; Biomembranes; Bonding; Gold; Lapping; Sensitivity; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium (FCS), 2010 IEEE International
  • Conference_Location
    Newport Beach, CA
  • ISSN
    1075-6787
  • Print_ISBN
    978-1-4244-6399-2
  • Type

    conf

  • DOI
    10.1109/FREQ.2010.5556312
  • Filename
    5556312
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1729901