Title :
A pressure sensor based on a HBAR micromachined structure
Author :
Baron, T. ; Gachon, D. ; Romand, J.P. ; Alzuaga, S. ; Ballandras, S. ; Masson, J. ; Catherinot, L. ; Chatras, M.
Author_Institution :
Dept. Time & Freq., Univ. de Franche-Comte, Besancon, France
Abstract :
In this work, we propose a pressure sensor fabricated on compound LiNbO3/Silicon/Silicon substrates obtained by Au/Au bonding at room temperature and double face lapping/polishing of LiNbO3/silicon stack and a final gold bonding with a structured silicon wafer. Sensitivity of the final sensor to bending moments then is tested and results show pressure sensitivity of such devices.
Keywords :
gold; lithium compounds; pressure sensors; HBAR micromachined structure; LiNbO3-Au-Si-Si; bending moments; gold bonding; pressure sensitivity; pressure sensor; silicon wafer; Acoustics; Biomembranes; Bonding; Gold; Lapping; Sensitivity; Silicon;
Conference_Titel :
Frequency Control Symposium (FCS), 2010 IEEE International
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-6399-2
DOI :
10.1109/FREQ.2010.5556312
