Si/Ni-Silicide Schottky junctions with atomically flat interfaces using NiSi2 source

Si/Ni-silicide Schottky junctions with atomically flat and thermodynamically stable interfaces have been achieved by using NiSi₂ source. The flat interfaces have been obtained from forming thin epitaxial NiSi₂ layer without Si substrate consumption on the interfaces. A robust φ_Bn of ~0.66 eV and ideally stable n-factor of ~1.00 were achieved from the Schottky barrier diode formed in the straightforward fabrication process. The facts are very beneficial for designing future nano-scale FETs.