DocumentCode
1730209
Title
Development on ultra high density memory package with PoP structure
Author
Lin, Ji Cheng ; Yu, Jeter ; Chung, Brian ; Chang, Ken ; Fang, David
Author_Institution
Powertech Technol. Incorporation, Hsinchu, Taiwan
fYear
2011
Firstpage
1136
Lastpage
1140
Abstract
Memory package is expected with high density as much as possible for handheld devices, SSD & MP3...etc. However testing yield is always a challenge for multiple chip stacking. This paper presents a PoP (Package on Package) solution for high density memory package up to 16 chips. PoP has good advantage on flexibility and easy testing compare to 16 chips in one package but warpage control is more difficult especially for top and bottom package warpage matching. The test vehicle in this study is 8 chips BGA plus 8chips BGA with 32 Gb NAND. In order to keep low total package height, thin chip thickness (30um) and thin substrate thickness (100um) were applied. To optimize warpage level, a 3D Finite element simulation was performed to simulate the package warpage behavior and to study the material and structure effect. Both room temperature and reflow temperature were considered to check top and bottom packages waprage trend. The result showed package warpage is highly depends on structure and material properties. Based on the simulation result, a real top and bottom package of PoP were manufactured. And shadow moiré test was performed to verify this design. Furthermore, moisture sensitivity test was performed to confirm the package reliability.
Keywords
ball grid arrays; circuit simulation; finite element analysis; flash memories; integrated circuit reliability; integrated circuit testing; integrated circuit yield; moisture; sensitivity; system-in-package; 3D finite element simulation; BGA; MP3; NAND flash; PoP structure; SSD; design verification; handheld device; integrated circuit testing; integrated circuit yield; material properties; moisture sensitivity test; multiple chip stacking; package on package solution; package reliability; package warpage behavior simulation; package warpage matching; reflow temperature; shadow moire test; structural properties; temperature 293 K to 298 K; ultra high density memory package; warpage control; Correlation; Electromagnetic compatibility; Finite element methods; Semiconductor device modeling; Simulation; Stacking; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location
Lake Buena Vista, FL
ISSN
0569-5503
Print_ISBN
978-1-61284-497-8
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2011.5898653
Filename
5898653
Link To Document