Title :
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices
Author :
Maconi, A. ; Arreghini, A. ; Compagnoni, C. Monzio ; Van den bosch, G. ; Spinelli, A.S. ; Van Houdt, J. ; Lacaita, A.L.
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy
Abstract :
This paper investigates the impact of lateral charge migration on the retention performance of charge-trap memories whose storage layer is not patterned self-aligned with the channel area of each cell. Experimental results on planar SONOS devices, revealing an important contribution of lateral charge migration at 150 °C, are used to calibrate a new numerical model accounting for both the vertical and the lateral charge loss from the silicon nitride. Modeling results allow a detailed analysis of the retention transients of both planar and 3D SONOS arrays, evaluating, for the latter, the minimum dimensions needed to fulfill the retention requirements at 85 °C.
Keywords :
field effect memory circuits; semiconductor device models; silicon compounds; 3D SONOS devices; Si3N4; charge-trap memories; lateral charge loss; lateral charge migration; planar SONOS devices; retention performance; retention transients; silicon nitride; temperature 150 degC; temperature 85 degC; vertical charge loss; Capacitors; Logic gates; SONOS devices; Silicon; Temperature measurement; Three dimensional displays; Transient analysis;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044201
