Title :
Robust SOI process without footing for ultra high-performance microgyroscopes
Author :
Kim, J. ; Park, S. ; Kwak, D. ; Ko, H. ; Carr, W. ; Buss, J. ; Cho, D.D.
Author_Institution :
Sch. of Electr. & Inf. Eng., Seoul Nat. Univ., South Korea
Abstract :
A microgyroscope with flat bottom surfaces is fabricated by combining the SOI (silicon on insulator) method with the SBM (sacrificial bulk micromachining) process [1/spl sim/3]. Roughened bottom surfaces and loose silicon fragments are common problems in deep silicon RIE (Reactive Ion Etching) using SOI wafers. In this paper, the silicon fragments are removed and the roughened bottom surfaces are smoothed by the SBM process to achieve robust performance. A gyroscope is fabricated by the proposed method. The measured noise equivalent resolution is 0.0044/spl deg//sec, and the measured bandwidth is 12.8 Hz. The linearity of output is within 7.4% for /spl plusmn/50/spl deg//sec range.
Keywords :
elemental semiconductors; gyroscopes; micromachining; rough surfaces; silicon-on-insulator; sputter etching; 12.8 Hz; Si; bandwidth; deep silicon RIE; noise equivalent resolution; reactive ion etching; robust SOI process; rough surface; sacrificial bulk micromachining; silicon fragments; silicon on insulator; ultra high performance microgyroscopes; Bandwidth; Etching; Gyroscopes; Linearity; Micromachining; Noise measurement; Noise robustness; Rough surfaces; Silicon on insulator technology; Surface roughness;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1217109
