Title :
3-D Copper based TSV for 60-GHz applications
Author :
Kannan, Sukeshwar ; Evana, Sai Shravan ; Gupta, Anurag ; Kim, Bruce ; Li, Li
Author_Institution :
Univ. of Alabama, Tuscaloosa, AL, USA
Abstract :
This paper presents modeling, simulation and experimental measurements of copper-based TSV for 60-GHz applications. We have considered different via dimensions for modeling and simulations and performed simulations to validate electrical performance of the TSV with varying data rates in addition to providing eye diagram analysis. To validate the electrical model, we performed TSV characterization by fabricating an interconnect using copper material on a silicon substrate.
Keywords :
copper alloys; integrated circuit interconnections; silicon alloys; three-dimensional integrated circuits; 3D copper based TSV; TSV characterization; copper material; data rate; electrical model; electrical performance; eye diagram analysis; frequency 60 GHz; interconnect fabrication; silicon substrate; through silicon vias; Computational modeling; Copper; Delay; Integrated circuit modeling; Silicon; Substrates; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-61284-497-8
Electronic_ISBN :
0569-5503
DOI :
10.1109/ECTC.2011.5898658
