DocumentCode
1730413
Title
Expert advisor for integrated virtual manufacturing and reliability for TSV/SiP based modules
Author
Chen, Zhaohui ; Zhou, Shengjun ; Lv, Zhicheng ; Liu, Chuan ; Chen, Xing ; Jia, Xiao ; Zeng, Ke ; Song, Bin ; Zhu, Fulong ; Chen, Mingxiang ; Wang, Xuefang ; Zhang, Honghai ; Liu, Sheng
Author_Institution
Res. Inst. of Micro/Nano Sci. & Technol., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2011
Firstpage
1183
Lastpage
1189
Abstract
The realization of vertical interconnected devices/chips using through silicon vias (TSVs) is one of the key emerging trends in 3D IC package. However, the new technology is in its R&D level and there are still many technical obstacles to overcome for it to be used for real products. For instance, some key technical challenges still exist in the TSV formation processes such as high aspect ratio via filling, wafer thinning and handling, etc. And the issue of reliability will become extraordinary crucial for TSV technology to be used in high volume production of electronic devices. The trial-and-error method is obviously not adaptable due to its time consuming and high cost due to the demanding pressure of time to market and time to profit. Therefore, there is an urgent need to develop innovative design methods for TSV/SiP based modules. In this paper, the efforts of the construction of an expert advisor for integrated virtual manufacturing and reliability design and evaluation for the TSV/SiP based modules are presented. Firstly, the material property database of TSV based package is built up through material property characterization by the submicron tester, dynamic mechanical analysis (DMA), thermal mechanical analysis (TMA) and nano-indentation. Secondly, novel modeling techniques for the copper electroplating, grinding and chemical mechanical planarization (CMP) and stacked bonding processes are developed for simulation of the whole manufacturing processes of TSV/SiP modules. Then the virtual prototyping method is used to validate and design the reliability of TSV/SiP modules such as stacked-dies packaging and hermetic MEMS packaging with the numerical simulation models of thermal cycling testing and electromigration testing. And finally the expert advisor for the TSV/SiP modules is integrated based on the results from the numerical modeling which are validated by the experiments.
Keywords
integrated circuit design; integrated circuit manufacture; integrated circuit reliability; numerical analysis; system-in-package; three-dimensional integrated circuits; 3D IC package; SiP; TSV; chemical mechanical planarization; dynamic mechanical analysis; electromigration testing; electronic devices; electroplating; grinding; hermetic MEMS packaging; integrated virtual manufacturing; nano-indentation; numerical modeling; numerical simulation models; stacked-dies packaging; submicron tester; thermal cycling testing; thermal mechanical analysis; through-silicon-via; trial-and-error method; vertical interconnected devices/chips; virtual prototyping method; Copper; Numerical models; Reliability engineering; Silicon; Testing; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
Conference_Location
Lake Buena Vista, FL
ISSN
0569-5503
Print_ISBN
978-1-61284-497-8
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2011.5898660
Filename
5898660
Link To Document