Title :
Optimized silicon photomultipliers with optical trenches
Author :
Pagano, R. ; Corso, D. ; Lombardo, S. ; Libertino, S. ; Valvo, G. ; Sanfilippo, D. ; Russo, A. ; Fallica, P.G. ; Pappalardo, A. ; Finocchiaro, P.
Author_Institution :
CNR-IMM, Catania, Italy
Abstract :
This paper reports on the electrical characteristics of silicon photomultipliers (SiPM) with optimized optical trench technology. The SiPM arrays were characterized from single pixels up to the full 64×64 pixel device. The data clearly show a perfect scaling of the dark current with the pixel number, thus indicating an almost ideal insulation among the pixels in the whole voltage operating range.
Keywords :
elemental semiconductors; photomultipliers; silicon; Si; SiPM arrays; dark current; electrical characteristics; optimized optical trench technology; optimized silicon photomultipliers; pixel device; Dark current; Optical crosstalk; Optical device fabrication; Optical imaging; Photomultipliers; Photonics; Silicon;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044204
