Title :
Silicon MEMS micro-switch with charge-induced retention
Author :
Suzuki, K. ; Neav, Y.
Author_Institution :
Fundamental Res. Labs., NEC Corp., Tsukuba, Japan
Abstract :
We report for the first time that a silicon MEMS micro-switch has successfully been operated in a manner of having a retention function, which is induced by a flow of stored charges. Depending on the maximum applied voltage, the micro-switches change the state of no bias voltage between ´Switch-on´ and ´Switch-off´ states. This change is reversible and repeatable. The retention function will enable a new type of MEMS micro-switch for mobile wireless terminals, offering low power consumption, simple circuit configuration, and long stability.
Keywords :
elemental semiconductors; microswitches; mobile communication; power consumption; silicon; charge-induced retention function; circuit configuration; mobile wireless terminals; power consumption; silicon MEMS microswitch; Contacts; Electrodes; Energy consumption; Etching; Glass; Microelectromechanical devices; Micromechanical devices; Microswitches; Silicon compounds; Voltage;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1217116
