DocumentCode
1730795
Title
A low phase noise 10MHz micromechanical lamé-mode bulk oscillator operating in nonlinear region
Author
Niu, Tianfang ; Palaniapan, Moorthi
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear
2010
Firstpage
189
Lastpage
194
Abstract
In this paper, a 10 MHz micromechanical reference oscillator is presented by combining lamé-mode bulk resonator with Q above 200,000 and low noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase noise performance has been achieved even when the resonator is operating in nonlinear region with a 4 Vp-p oscillation output. A clear sine wave output signal is observed and the oscillator shows -138 dBc/Hz noise floor and -132 dBc/Hz 1 kHz away from the carrier, which meets the cellular phase noise requirement of -130 dBc/Hz at 1 kHz offset for 13 MHz GSM reference oscillators. Such oscillator does not require any gain limiting circuitry and hence makes the implementation much simpler and less noisy.
Keywords
Q-factor; energy storage; micromechanical resonators; oscillators; phase noise; radiofrequency oscillators; cellular phase noise; energy storage capability; frequency 10 MHz; frequency 13 MHz; lamé-mode bulk resonator; low phase noise; micromechanical lamé-mode bulk oscillator; quality factor; Electrodes; Floors; Phase noise; Resonant frequency; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium (FCS), 2010 IEEE International
Conference_Location
Newport Beach, CA
ISSN
1075-6787
Print_ISBN
978-1-4244-6399-2
Type
conf
DOI
10.1109/FREQ.2010.5556345
Filename
5556345
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