• DocumentCode
    1730795
  • Title

    A low phase noise 10MHz micromechanical lamé-mode bulk oscillator operating in nonlinear region

  • Author

    Niu, Tianfang ; Palaniapan, Moorthi

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2010
  • Firstpage
    189
  • Lastpage
    194
  • Abstract
    In this paper, a 10 MHz micromechanical reference oscillator is presented by combining lamé-mode bulk resonator with Q above 200,000 and low noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase noise performance has been achieved even when the resonator is operating in nonlinear region with a 4 Vp-p oscillation output. A clear sine wave output signal is observed and the oscillator shows -138 dBc/Hz noise floor and -132 dBc/Hz 1 kHz away from the carrier, which meets the cellular phase noise requirement of -130 dBc/Hz at 1 kHz offset for 13 MHz GSM reference oscillators. Such oscillator does not require any gain limiting circuitry and hence makes the implementation much simpler and less noisy.
  • Keywords
    Q-factor; energy storage; micromechanical resonators; oscillators; phase noise; radiofrequency oscillators; cellular phase noise; energy storage capability; frequency 10 MHz; frequency 13 MHz; lamé-mode bulk resonator; low phase noise; micromechanical lamé-mode bulk oscillator; quality factor; Electrodes; Floors; Phase noise; Resonant frequency; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control Symposium (FCS), 2010 IEEE International
  • Conference_Location
    Newport Beach, CA
  • ISSN
    1075-6787
  • Print_ISBN
    978-1-4244-6399-2
  • Type

    conf

  • DOI
    10.1109/FREQ.2010.5556345
  • Filename
    5556345