DocumentCode :
1730834
Title :
TCAD study of the detection mechanisms in silicon nanoribbon-based gas sensors
Author :
Silvestri, Luca ; Reggiani, Susanna ; Passi, Vikram ; Ravaux, Florent ; Dubois, Emmanuel ; Raskin, Jean-Pierre ; Clavaguera, Simon ; Carella, Alexandre ; Celle, Caroline ; Simonato, Jean-Pierre
Author_Institution :
ARCES, Univ. of Bologna, Bologna, Italy
fYear :
2011
Firstpage :
131
Lastpage :
134
Abstract :
An extensive simulation analysis of silicon-nanoribbon field-effect transistors for the detection of chemical warfare agents has been performed through investigation of the physical behavior of the device. An accurate modeling of the nanoribbon interfaces has been carried out before and after gas exposure by combining simulation, characterization techniques and validation against experiments. A quantitative description of the physical mechanisms involved in the gas detection has been obtained.
Keywords :
field effect transistors; gas sensors; nanostructured materials; silicon; technology CAD (electronics); TCAD study; chemical warfare agents; detection mechanisms; field effect transistors; gas detection; gas sensors; quantitative description; silicon nanoribbon; Gas detectors; Interference; Numerical models; Photonic band gap; Signal to noise ratio; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
ISSN :
1930-8876
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2011.6044217
Filename :
6044217
Link To Document :
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