Title :
Low temperature MOS device modeling
Author :
Selberherr, S. ; Langer, E.
Author_Institution :
Tech. Univ. of Vienna, Austria
Abstract :
The state of the art in self-consistent numerical low-temperature MOS modeling is reviewed. The physical assumptions required to describe carrier transport at liquid-nitrogen temperature are discussed. Particular emphasis is put on the models for space charge (impurity freeze-out), carrier mobility (temperature dependence of scattering mechanisms at a semiconductor-insulator interface), and carrier generation-recombination (impact ionization). The differences with regard to the numerical methods required for the solution of low-temperature models compared to room-temperature models are explained. Typical results obtained with the simulator MINIMOS 4 are presented
Keywords :
carrier mobility; electronic engineering computing; impact ionisation; insulated gate field effect transistors; low-temperature techniques; numerical methods; semiconductor device models; space charge; MINIMOS 4; MOS device modeling; MOSFET; carrier generation-recombination; carrier mobility; carrier transport; impact ionization; impurity freeze-out; low-temperature models; numerical methods; scattering mechanisms; semiconductor-insulator interface; simulator; space charge; temperature dependence; Doping; Effective mass; Ionization; MOS devices; Microelectronics; Nitrogen; Poisson equations; Semiconductor process modeling; Space charge; Temperature;
Conference_Titel :
Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
Conference_Location :
Burlington, VT
DOI :
10.1109/LTSE.1989.50184
