DocumentCode
1730906
Title
Self-substrate-triggered technique to enhance turn-on uniformity of multi-finger ESD protection devices
Author
Ker, Ming-Dou ; Chen, Jia-Huei ; Hsu, Kuo-Chun
Author_Institution
Inst. of Electron., National Chiao-Tung Univ., Hsinchu, Taiwan
fYear
2005
Firstpage
17
Lastpage
18
Abstract
A novel self-substrate-triggered (SST) technique is proposed to solve the nonuniform turn-on issue of the multi-finger GGNMOS for ESD protection. The first turned-on center finger is used to trigger on all fingers in the GGNMOS structure with self-substrate-triggered technique. So, the turn-on uniformity and ESD robustness of GGNMOS can be greatly improved by the new proposed self-substrate-triggered technique.
Keywords
MOSFET; electrostatic discharge; ESD robustness; multifinger ESD protection devices; multifinger GGNMOS; self-substrate-triggered technique; turn-on uniformity enhancement; CMOS technology; Electrostatic discharge; Fingers; Integrated circuit testing; MOS devices; Nanoelectronics; Protection; Robustness; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
ISSN
1930-8868
Print_ISBN
0-7803-9058-X
Type
conf
DOI
10.1109/VTSA.2005.1497063
Filename
1497063
Link To Document