Title :
A MEMS-based hybrid circuit having metallized cavity for Ku-band wireless communication
Author :
Lee, S.-S. ; Yoshida, Y. ; Nishino, T. ; Suehiro, Y. ; Oh-hashi, H. ; Fukami, T. ; Kimata, M. ; Ishida, O.
Author_Institution :
Mitsubishi Electr. Corp., Adv. Technol. R&D Center, Hyogo, Japan
Abstract :
We present a hybrid circuit fabricated by means of MicroElectroMechanical System (MEMS) process technology. It has been newly developed as a component for the application to wireless communication system. The hybrid circuit consists of inductors and shunt capacitors, which have been fabricated on a silicon wafer. In our device, an etched 30 /spl mu/m deep cavity is utilized to minimize insertion losses of transmission lines for inductors. Moreover, the bottom of cavity is metallized for the ground biasing of shunt capacitors. Our metallized cavity structure and proposed fabrication process scheme for that have the advantages in terms of insertion loss issue and a variety of applicability in RF MEMS field. In S-parameter measurement, we obtained 2.03 dB and 2.18 dB as insertion losses and 21.63 dB as return loss at 12 GHz. The measured frequency characteristics are also well agreed with the simulation results.
Keywords :
S-parameters; capacitors; hybrid integrated circuits; inductors; micromechanical devices; telecommunication transmission lines; 12 GHz; 2.03 dB; 2.18 dB; 21.63 dB; 30 micron; Ku-band wireless communication; RF MEMS-based hybrid circuit; S-parameter; Si; cavity structure; inductors; insertion losses; metallized cavity; microelectromechanical system; shunt capacitors; silicon wafer; transmission lines; Capacitors; Circuits; Inductors; Insertion loss; Metallization; Microelectromechanical systems; Micromechanical devices; Shunt (electrical); Silicon; Wireless communication;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1217134
