• DocumentCode
    1731064
  • Title

    70nm DRAM technology for DDR-3 application

  • Author

    Kim, Hyungtak ; Kim, Sangho ; Lee, Sungsam ; Jang, Sungho ; Kim, Ji-hoon ; Sung, Yangsoo ; Park, Junwoong ; Kwon, Saehan ; Jun, Sangmin ; Park, Wontae ; Han, Daehan ; Cho, Changhyun ; Kim, Yungi ; Kim, Kinam ; Ryu, Byungil

  • Author_Institution
    Device Solution Network, Samsung Electron. Co. Ltd., Yongin, South Korea
  • fYear
    2005
  • Firstpage
    29
  • Lastpage
    30
  • Abstract
    For the first time, we developed 70nm DRAM technology applicable to a manufacturing level. This technology is aimed at DDR-3 application, which requires low-voltage operation and high speed performance. Fully working 70nm DRAMs were realized combining W-gate dual poly process, recess-channel-array-transistors (RCATs), and MIM cell capacitor module. In this paper, we present performance of 70nm node DRAMs which qualifies DDR-3 application requirement.
  • Keywords
    DRAM chips; low-power electronics; nanotechnology; 70 nm; DDR-3 application; DRAM technology; W-gate dual poly process; high speed performance; low power electronics; low-voltage operation; CMOS technology; Capacitance; Doping; Fabrication; Implants; Logic devices; MIM capacitors; MOSFETs; Random access memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
  • ISSN
    1930-8868
  • Print_ISBN
    0-7803-9058-X
  • Type

    conf

  • DOI
    10.1109/VTSA.2005.1497069
  • Filename
    1497069
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1731064