• DocumentCode
    1731086
  • Title

    A 0.168μm2/0.11μm2 highly scalable high performance embedded DRAM cell for 90/65-nm logic applications

  • Author

    Wang, G. ; Parries, P. ; Khan, B. ; Liu, J. ; Otani, Y. ; Norum, J. ; Robson, Norman ; Kirihata, T. ; Iyer, Srikanth S.

  • Author_Institution
    IBM Semicond. R&D Center, Hopewell Junction, NY, USA
  • fYear
    2005
  • Firstpage
    31
  • Lastpage
    32
  • Abstract
    A high performance embedded DRAM cell has been developed in 90nm technology using a pass transistor with standard 2.2nm gate oxide and trench capacitor. This device offers 25% on-current improvement with 1.5V wordline boosted voltage, and reduces the cell size by 10%. Measured data retention of >200μs is ideal for 200+MHz random access cycle embedded DRAM macro with a concurrent refresh mode. The scalability of the cell to 0.11 μm2 in 65-nm node is also demonstrated.
  • Keywords
    DRAM chips; integrated circuit design; logic circuits; nanoelectronics; 1.5 V; 2.2 nm; 200 MHz; 65 nm; 90 nm; DRAM scalability; concurrent refresh mode; embedded DRAM cell; logic applications; Degradation; Design optimization; Doping; Logic devices; Random access memory; Scalability; Subthreshold current; Threshold voltage; Transistors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
  • ISSN
    1930-8868
  • Print_ISBN
    0-7803-9058-X
  • Type

    conf

  • DOI
    10.1109/VTSA.2005.1497070
  • Filename
    1497070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1731086