Title :
Integration technologies for scalable high density MRAM
Author :
Park, J.H. ; Jeong, W.C. ; Oh, J.H. ; Jeong, C.W. ; Shin, J.M. ; Hwang, Y.N. ; Ahn, S.J. ; Lee, S.-H. ; Lee, S.Y. ; Ryoo, K.C. ; Jonghyun Park ; Yang, F. ; Koh, G.H. ; Jeong, G.T. ; Jeong, H.S. ; Kim, Kinam
Author_Institution :
Semicond. R&D Div., Samsung Electron. Co., Ltd., Yongin, South Korea
Abstract :
We investigate the key factors for scalable high density MRAM. Specifically we examine problems such as large switching field, small sensing margin and writing disturbance following a decrease in size. We demonstrate these problems and suggest several solutions for realizing high density MRAM.
Keywords :
magnetic storage; random-access storage; high density MRAM; magnetic random access memory; sensing margin; switching field; writing disturbance; CMOS process; CMOS technology; Energy barrier; Joining processes; Research and development; Scalability; Spin polarized transport; Voltage; Writing;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497074
