Title :
First demonstration of phase change memory device using solution processed GeTe nanoparticles
Author :
Jeyasingh, Rakesh G D ; Caldwell, Marissa A. ; Milliron, Delia J. ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We present the first demonstration of a functional Phase Change Memory (PCM) device fabricated using solution processed GeTe phase change nanoparticle. The device shows the characteristic memory behavior of crystallization and threshold switching. The cycling endurance of the device is up to 100 cycles. The cells are currently the best performing solution processed phase change material based memory devices reported so far.
Keywords :
crystallisation; germanium compounds; nanoelectronics; nanoparticles; phase change memories; GeTe; characteristic memory behavior; crystallization; functional phase change memory device; phase change nanoparticle; threshold switching; Electrodes; Films; Nanoparticles; Phase change materials; Phase change random access memory; Resistance;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044225
