Contact resistance of TiW to ultra-thin phase change material layers

In this article we report on the change in contact resistance of TiW to doped-Sb₂Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb₂Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ρ_C. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb₂Te interface.