Title :
Atomic layer deposition of 25-nm-thin sidewall spacer for enhancement of FinFET performance
Author :
Endo, Kazuhiko ; Ishikawa, Yuki ; Matsukawa, Takashi ; Liu, Yongxum ; Oruchi, S. ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
We have successfully fabricated FinFETs with a 25-nm-short extension of the source/drain by using atomic layer deposition of SiO2 thin films for the side-wall spacer of the gate electrode. The performance of the FinFET has been successfully improved by the reduction of the parasitic resistance.
Keywords :
MOSFET; atomic layer deposition; semiconductor thin films; silicon compounds; FinFET; SiO2 thin films; atomic layer deposition; gate electrode; parasitic resistance; size 25 nm; source/drain; thin sidewall spacer; Atomic layer deposition; Films; FinFETs; Ion implantation; Logic gates; Plasmas;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044229
