• DocumentCode
    1731382
  • Title

    Inversion MOS capacitance extraction for ultra-thin gate oxide using BSIM4

  • Author

    Lee, Wei ; Su, Ke-Wei ; Chiang, Chung-Shi ; Liu, Sally ; Su, Pin

  • Author_Institution
    Dept. of Electron. Eng., National Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2005
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    In this work, we investigate the distorted C-V characteristics for MOSFETs with ultra-thin gate oxide. We propose a scalable BSIM4-based macro model to simulate the anomalous C-V behavior. Based on the model, we develop a methodology to extract the true MOS capacitance.
  • Keywords
    MOSFET; capacitance; semiconductor device models; BSIM4-based macro model; C-V characteristics; MOS capacitance extraction; MOSFET; ultra-thin gate oxide; Attenuation measurement; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Data mining; Inductance measurement; MOSFETs; Testing; Thickness measurement; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
  • ISSN
    1930-8868
  • Print_ISBN
    0-7803-9058-X
  • Type

    conf

  • DOI
    10.1109/VTSA.2005.1497081
  • Filename
    1497081
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1731382