Title :
Inversion MOS capacitance extraction for ultra-thin gate oxide using BSIM4
Author :
Lee, Wei ; Su, Ke-Wei ; Chiang, Chung-Shi ; Liu, Sally ; Su, Pin
Author_Institution :
Dept. of Electron. Eng., National Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this work, we investigate the distorted C-V characteristics for MOSFETs with ultra-thin gate oxide. We propose a scalable BSIM4-based macro model to simulate the anomalous C-V behavior. Based on the model, we develop a methodology to extract the true MOS capacitance.
Keywords :
MOSFET; capacitance; semiconductor device models; BSIM4-based macro model; C-V characteristics; MOS capacitance extraction; MOSFET; ultra-thin gate oxide; Attenuation measurement; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Data mining; Inductance measurement; MOSFETs; Testing; Thickness measurement; Tunneling;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497081
