Title :
The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks
Author :
Kim, BeomYong ; Ji, YunHyuck ; Lee, SeungMi ; Jeon, BongSeok ; Lee, KeeJeung ; Hong, Kwon ; Park, SungKi
Author_Institution :
R&D Div., Hynix Semicond. Inc., Icheon, South Korea
Abstract :
The origin of flat band voltage shift phenomena using arsenic ion-implant in High-k/Metal Inserted Poly Si (HK/MIPS) gate stacks was investigated. Arsenic ion-implantations were carried out on HfSiO and HfSiON dielectric layers. Precise arsenic profile was obtained through front and backside SIMS analysis. From the electrical and physical analysis, we verified that the flat band voltage was shifted due to an arsenic dipole formation at high-k/metal interface. The negative shift of 480 mV was obtained with the optimized arsenic ion implant condition.
Keywords :
arsenic; elemental semiconductors; high-k dielectric thin films; ion implantation; HfSiON; SIMS analysis; arsenic ion-implantation; arsenic profile; dielectric layer; electrical analysis; flat-band voltage shift; high-k/metal inserted poly Si gate stack; physical analysis; Capacitance-voltage characteristics; Implants; Logic gates; MOS capacitors; Nitrogen; Silicon; Tin;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0707-0
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2011.6044230
