Thermally robust atomic layer deposited ZrO2 gate dielectric films upon the post-deposition annealing

Author

Jung, Hyung-Suk ; Kim, Hyo Kyeom ; Lee, Sang Young ; Lee, Nae-In ; Park, Tae Joo ; Hwang, Cheol Seong

fYear

2011

Firstpage

71

Lastpage

74

Abstract

The effects of post-deposition annealing (PDA) on the electrical characteristics of ZrO₂ and HfO₂ gate dielectric films were investigated. After PDA at 600°C, the insulating properties of ZrO₂ were improved, while those of HfO₂ were deteriorated. The improved insulating properties of ZrO₂ are attributed to both the negligible increase of interfacial layer (IL) thickness and the transformation of its crystalline structure to the tetragonal phase. The degraded insulating properties of HfO₂ after PDA at high temperatures were due to the abrupt increase of IL thickness and the generation of current paths through grain boundaries. The different IL growth between HfO₂ and ZrO₂ after PDA could be understood from the different formation energy of oxygen interstitials in the two dielectric films.

Keywords

annealing; hafnium compounds; high-k dielectric thin films; interface structure; zirconium compounds; HfO₂; HfO₂ gate dielectric film; ZrO₂; interfacial layer thickness; post-deposition annealing; temperature 600 C; thermally robust atomic layer deposited ZrO₂ gate dielectric films; Annealing; Crystallization; Films; Hafnium compounds; Logic gates; Temperature; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European

Conference_Location

Helsinki

ISSN

1930-8876

Print_ISBN

978-1-4577-0707-0

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2011.6044232

Filename

6044232