Magnetic tunneling junction device model for circuit simulation

Author

Chen, Y.-S. ; Lin, W.-C. ; Chen, C.-M. ; Hung, C.-C. ; Chen, K.-L. ; Kao, M.-J. ; Tsai, M-J ; Tang, Denny D.

Author_Institution

Electron. Res. & Service Organ., ITRI, Hsinchu, Taiwan

fYear

2005

Firstpage

78

Lastpage

81

Abstract

In this work, we develop the HSPICE macro model of the magnetic tunneling junction (MTJ) devices for circuit simulation. The macro model exhibits the spin behavior of free layer magnetic moment and automatically changes the magnetic resistance when magnetic moment between free and pinned layer changes. The interlayer coupling effect, metal line resistance and bias-dependent MR ratio are also taken into account. An ingenious approximation is used to model the write magnetic field asteroid curve. This macro model can improve the simulation accuracy of MRAM.

Keywords

SPICE; circuit simulation; magnetic moments; magnetic storage; magnetic tunnelling; magnetoresistive devices; random-access storage; semiconductor device models; HSPICE macro model; MRAM; MTJ devices; circuit simulation; free layer magnetic moment; interlayer coupling effect; magnetic resistance; magnetic tunneling junction device model; metal line resistance; write magnetic field asteroid curve; Capacitors; Circuit simulation; Magnetic fields; Magnetic moments; Magnetic tunneling; Semiconductor device manufacture; Strips; Switches; Virtual manufacturing; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on

ISSN

1930-8868

Print_ISBN

0-7803-9058-X

Type

conf

DOI

10.1109/VTSA.2005.1497088

Filename

1497088