DocumentCode :
1731666
Title :
The future prospect of nonvolatile memory
Author :
Kim, Kinam ; Choi, Jung Hyuk ; Choi, Jungdal ; Jeong, Hong-Sik
Author_Institution :
Semicond. R & D Center, Samsung Electron. Co., LTD., Yongin, South Korea
fYear :
2005
Firstpage :
88
Lastpage :
94
Abstract :
As mobile appliances are prevailing in our daily lives, the nonvolatile memory suitable for mobile applications becomes indispensable elements and it is anticipated that the nonvolatile memory usage is much increased in future due to much diversified applications. Therefore it is very appropriate and important to look into where the nonvolatile memory technologies are now, what the challenges are, and where the future technologies should go. In this study, two major devices of nonvolatile memory i.e., NAND flash and NOR flash are reviewed and then the newly emerging nonvolatile memory i.e., PRAM (phase change memory), and FRAM (ferroelectric memory) are discussed.
Keywords :
NAND circuits; NOR circuits; ferroelectric storage; flash memories; random-access storage; FRAM; NAND flash; NOR flash; PRAM; ferroelectric memory; mobile appliances; nonvolatile memory; phase change memory; Appropriate technology; Consumer electronics; Electrons; Ferroelectric films; Flash memory; Nonvolatile memory; Phase change random access memory; Random access memory; Research and development; Semiconductor memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
ISSN :
1930-8868
Print_ISBN :
0-7803-9058-X
Type :
conf
DOI :
10.1109/VTSA.2005.1497091
Filename :
1497091
Link To Document :
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