Title :
Toward full crystal oscillator integration for RF applications
Author :
Tinguy, Pierre ; Lardet-Vieudrin, Franck ; Dulmet, Bernard ; Leost, Johnny ; Couteleau, Laurent
Author_Institution :
FEMTO-ST Inst., Besançon, France
Abstract :
This paper presents the performances of an integrated oscillator working at 3.3V power supply for XO applications, extended to OCXO by digital selections. It is realized in a standard 0.35μm SiGe BiCMOS technology from austriamicrosystems AG®. Some experimental characterizations have been performed at 40 MHz and give good agreement with simulations. This die is then used to develop a miniaturized XO design on silicon substrate (8.5×8.5 mm2).
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; VHF oscillators; crystal oscillators; silicon; BiCMOS technology; OCXO applications; RF applications; Si; SiGe; austriamicrosystems AG; digital selections; frequency 40 MHz; full-crystal oscillator integration; integrated oscillator; miniaturized XO design; silicon substrate; size 0.35 mum; voltage 3.3 V; Layout; Phase noise; Power supplies; Resonant frequency; Sensitivity;
Conference_Titel :
Frequency Control Symposium (FCS), 2010 IEEE International
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-6399-2
DOI :
10.1109/FREQ.2010.5556375
