Author :
Kubicek, S. ; Veloso, A. ; Anil, K.G. ; De Gendt, Stefan ; Heyns, M. ; Jurczak, Malgorzata ; Biesemans, S. ; Lauwers, A. ; Hayashi, Shin´ichiro ; Yamamoto, K. ; Mitsuhashi, R. ; Kittl, J.A. ; Dal, M. Yan ; Horii, Shunsuke ; Harada, Y. ; Kubota, M. ; Niwa,
Abstract :
We show for the first time that full Ni silicidation (Ni-FUSI) of poly gates in combination with Hf based gate dielectrics meets the required device performance for the 65nm LSTP technology node. Important device parameters, like Cinv, mobility and drive currents exhibit significant improvement without compromising the oxide integrity and reliability. The drive of nMOS and pMOS transistors for the VDD=1.1V at 10pA/μm off state leakage is 575μA/ μm and 1650 μA/μm respectively.
Keywords :
CMOS integrated circuits; MOSFET; dielectric materials; hafnium compounds; 65 nm; LSTP CMOS; Ni silicidation; Ni-FUSI; gate dielectrics; high-k dielectric; nMOS transistor; pMOS transistors; CMOS technology; Degradation; Hafnium; High K dielectric materials; High-K gate dielectrics; Implants; Instruments; MOS devices; MOSFETs; Silicidation;
