• DocumentCode
    1731806
  • Title

    Growth mechanism of ALD-TiN and the thickness dependence of work function

  • Author

    Choi, K. ; Lysaght, P. ; Wen, H.-C. ; Matthews, K. ; AlShareef, H. ; Huffman, C. ; Harris, R. ; Luan, H. ; Majhi, P. ; Lee, B.H.

  • Author_Institution
    SEMATECH, Austin, TX, USA
  • fYear
    2005
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    We investigated the growth mechanism and work function of ALD-TiN film on SiO2 and HfSiO films to understand how the work function is related to process conditions and starting surface. TiN nucleation rate and growth rate are found to be dependent on the dielectric films. The effective work function of TiN has been changed as a function of film thickness and also affected by dielectric films.
  • Keywords
    dielectric thin films; epitaxial growth; hafnium compounds; nucleation; silicon compounds; titanium compounds; work function; HfSiO; TiN; atomic layer deposition; dielectric films; film thickness; growth mechanism; nucleation; work function; Atomic layer deposition; Dielectric films; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Instruments; Silicon; Surface cleaning; Surface morphology; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
  • ISSN
    1930-8868
  • Print_ISBN
    0-7803-9058-X
  • Type

    conf

  • DOI
    10.1109/VTSA.2005.1497096
  • Filename
    1497096
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1731806