Title :
Growth mechanism of ALD-TiN and the thickness dependence of work function
Author :
Choi, K. ; Lysaght, P. ; Wen, H.-C. ; Matthews, K. ; AlShareef, H. ; Huffman, C. ; Harris, R. ; Luan, H. ; Majhi, P. ; Lee, B.H.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
We investigated the growth mechanism and work function of ALD-TiN film on SiO2 and HfSiO films to understand how the work function is related to process conditions and starting surface. TiN nucleation rate and growth rate are found to be dependent on the dielectric films. The effective work function of TiN has been changed as a function of film thickness and also affected by dielectric films.
Keywords :
dielectric thin films; epitaxial growth; hafnium compounds; nucleation; silicon compounds; titanium compounds; work function; HfSiO; TiN; atomic layer deposition; dielectric films; film thickness; growth mechanism; nucleation; work function; Atomic layer deposition; Dielectric films; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Instruments; Silicon; Surface cleaning; Surface morphology; Tin;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497096
