DocumentCode
1731850
Title
A systematic study of the influence of nitrogen in tuning the effective work function of nitrided metal gates
Author
Wen, H.-C. ; Choi, K. ; Majhi, P. ; Alshareef, H. ; Huffman, C. ; Lee, B.H.
Author_Institution
Philips, Austin, TX, USA
fYear
2005
Firstpage
105
Lastpage
106
Abstract
Systematic analysis of the influence of nitrogen on the work function of TaN, HfN, and HfTiN was performed. It was observed that the effective work function of these materials could be modulated by ∼300 meV by varying the nitrogen content in the film even after 1000 °C anneal. Additionally, there is minimal observable influence of high nitrogen flow rates during the plasma deposition of metal nitrides on the integrity of the hafnium based high-k dielectrics.
Keywords
annealing; dielectric thin films; hafnium compounds; nitridation; plasma deposition; tantalum compounds; work function; 1000 C; 300 meV; HfTiN; TaN; high-k dielectrics; metal nitrides; nitrided metal gates; plasma deposition; work function; Annealing; Dielectric materials; Etching; Hafnium; High K dielectric materials; MOS devices; Nitrogen; Plasma applications; Plasma materials processing; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
ISSN
1930-8868
Print_ISBN
0-7803-9058-X
Type
conf
DOI
10.1109/VTSA.2005.1497097
Filename
1497097
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