Title :
Thermal compensation for aluminum nitride Lamb wave resonators operating at high temperature
Author :
Lin, Chih-Ming ; Yen, Ting-Ta ; Felmetsger, Valery V. ; Hopcroft, Matthew A. ; Kuypers, Jan H. ; Pisano, Albert P.
Author_Institution :
Berkeley Sensor & Actuator Center, Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
Thermal compensation for aluminum nitride (AlN) Lamb wave resonators operating at high temperature is experimentally demonstrated in this study. By adding a compensating layer of silicon dioxide (SiO2), the turnover temperature can be designed for high temperature operation by varying the normalized AlN thickness (hAlN/λ) and the normalized SiO2 thickness (hSiO2/λ) in the AlN/SiO2 composite stack. With different designs of hAlN/λ and hSiO2/λ, the Lamb wave resonators were well temperature-compensated at 214°C, 430°C, and 542°C, respectively. Furthermore, several testing cycles in the full temperature range from 25°C to 700°C were taken to demonstrate the repeatability of the frequency characteristics. This thermal compensation technology is promising for future applications to piezoelectric resonators, filters, and sensors at high temperature.
Keywords :
aluminium compounds; compensation; silicon compounds; surface acoustic wave resonators; AlN-SiO2; aluminum nitride Lamb wave resonators; piezoelectric filters; piezoelectric resonators; piezoelectric sensors; temperature 25 degC to 700 degC; thermal compensation; thermal compensation technology; turnover temperature; Electrodes; Frequency measurement; Resonant frequency; Temperature distribution; Temperature measurement; Temperature sensors; Aluminum Nitride; High Temperature; Lamb Wave Resonator; Silicon Dioxide; Thermal Compensation; Zero TCF;
Conference_Titel :
Frequency Control Symposium (FCS), 2010 IEEE International
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-6399-2
DOI :
10.1109/FREQ.2010.5556381
