Title :
Fine frequency selection techniques for aluminum nitride Lamb wave resonators
Author :
Yen, Ting-Ta ; Lin, Chih-Ming ; Lai, Yun-Ju ; Wittwer, Damien ; Hopcroft, Matthew A. ; Pisano, Albert P.
Author_Institution :
Berkeley Sensor & Actuator Center, Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
This paper reports fine frequency selection techniques for aluminum nitride (AlN) Lamb wave mode resonators (LWR) to control the relative frequency of resonators in an array to 0.1%. The technique that works the best is by adjusting the so-called AlN “overhang” dimension, OH, measured from the center of the outermost electrode to the edge of AlN plate independently of the interdigital transducer (IDT) pitch. Experimental results suggest the center frequency can be linearly adjusted by up to ±2.5% with no significant effect on other resonator parameters including Q, Rm, C0, and k2t. Preliminary results of filter banks at 735 MHz utilizing this technique demonstrate that the relative center frequency of each channel can be evenly spaced by 0.05% without post-process trimming.
Keywords :
III-V semiconductors; UHF filters; aluminium compounds; channel bank filters; frequency control; interdigital transducers; surface acoustic wave resonators; AlN; IDT pitch; LWR; aluminum nitride lamb wave mode resonators; aluminum nitride overhang dimension; filter banks; fine frequency selection techniques; frequency 735 MHz; interdigital transducer; relative frequency control; Cavity resonators; Electrodes; Filter bank; Micromechanical devices; Resonant frequency; Resonator filters; Aluminum nitride (AlN); Lamb wave mode resonator (LWR); channel-select; filter bank; narrow-band;
Conference_Titel :
Frequency Control Symposium (FCS), 2010 IEEE International
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-6399-2
DOI :
10.1109/FREQ.2010.5556384