SiC devices offer improved reliability for T&D applications

The purpose of this paper is to identify and describe the key enabling roles that SiC power semiconductor devices will play in future envisaged electricity networks. Prospective SiC devices have higher voltage rating, are faster switching and can operate at higher temperature than their Si counterparts. Hence power electronic (PE) equipment using SiC devices will have, not only much lower dissipation, but also a lower component count and thus be more compact and reliable.