Title :
Towards optimally shaped fins in p-channel tri-gate FETs: can fin height be reduced further?
Author :
Dixit, A. ; Anil, K.G. ; Mercha, A. ; Collaert, N. ; Bros, S. ; Richard, O. ; Rooyackers, R. ; Jurczak, M. ; De Meyer, K. ; Goodwin, M.
Author_Institution :
IMEC, Heverlee, Belgium
Abstract :
We explore the scaling capability of tri-gate pFETs by comparing their dc and ac-electrical performance as a function of fin height. A 24 % reduction in drive current (at IOFF = 10-7 A/μm) is observed as the fin height, is reduced from 58 to 40 nm.
Keywords :
field effect transistors; 40 nm; 58 nm; ac-electrical performance; dc-electrical performance; fin height; optimally shaped fins; p-channel tri-gate FET; CMOS technology; Capacitance-voltage characteristics; Etching; FETs; Fabrication; FinFETs; Flexible manufacturing systems; Low-frequency noise; Positron emission tomography; Shape;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497101
