DocumentCode
1732046
Title
Characteristics of modified-Schottky-barrier (MSB) FinFETs
Author
Lin, Chia-Pin ; Tsui, Bing-Yue
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2005
Firstpage
118
Lastpage
119
Abstract
It has been reported that modified-Schottky-barrier (MSB) FinFET can solve the problem of low on-state/off-state current ratio that the conventional SB MOSFETs have. In this work, we report for the first time that high performance n- and p-channel MSB devices can be fabricated with the same metal silicide and process technique. Detailed device characteristics as well as hot carrier reliability of MSB FinFETs are investigated. It is concluded that the high performance MSB FinFET is also highly reliable. The simple process and low thermal budget features make the MSB FinFET a very promising nano device.
Keywords
Schottky barriers; field effect transistors; hot carriers; semiconductor device reliability; device characteristics; hot carrier reliability; modified-Schottky-barrier FinFET; n-channel MSB device; nano device; on-state/off-state current ratio; p-channel MSB device; thermal budget; Annealing; FinFETs; High-K gate dielectrics; Hot carriers; Laboratories; MOSFETs; Senior members; Silicidation; Silicides; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
ISSN
1930-8868
Print_ISBN
0-7803-9058-X
Type
conf
DOI
10.1109/VTSA.2005.1497104
Filename
1497104
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