Title :
Characteristics of modified-Schottky-barrier (MSB) FinFETs
Author :
Lin, Chia-Pin ; Tsui, Bing-Yue
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
It has been reported that modified-Schottky-barrier (MSB) FinFET can solve the problem of low on-state/off-state current ratio that the conventional SB MOSFETs have. In this work, we report for the first time that high performance n- and p-channel MSB devices can be fabricated with the same metal silicide and process technique. Detailed device characteristics as well as hot carrier reliability of MSB FinFETs are investigated. It is concluded that the high performance MSB FinFET is also highly reliable. The simple process and low thermal budget features make the MSB FinFET a very promising nano device.
Keywords :
Schottky barriers; field effect transistors; hot carriers; semiconductor device reliability; device characteristics; hot carrier reliability; modified-Schottky-barrier FinFET; n-channel MSB device; nano device; on-state/off-state current ratio; p-channel MSB device; thermal budget; Annealing; FinFETs; High-K gate dielectrics; Hot carriers; Laboratories; MOSFETs; Senior members; Silicidation; Silicides; Temperature;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497104
