DocumentCode
1732065
Title
Compact modeling of FinFETs featuring independent-gate operation mode
Author
Lin, C.H. ; Dunga, M. ; Balasubramanian, S. ; Niknejad, A.M. ; Hu, C. ; Xi, X. ; He, J. ; Chang, L. ; Williams, R.Q. ; Ketchen, M.B. ; Haensch, W.E. ; Chan, M.
Author_Institution
Dept. of EECS, Univ. of California at Berkeley, CA, USA
fYear
2005
Firstpage
120
Lastpage
121
Abstract
This paper describes the concept of the dynamic VTH control in the compact modeling of FinFET. The model is implemented into Berkeley SPICE3 and verified with multiple-dimensional device simulator.
Keywords
SPICE; circuit simulation; field effect transistors; semiconductor device models; voltage control; FinFET; SPICE3; compact modeling; dynamic VTH control; field effect transistor; independent-gate operation mode; multiple-dimensional device simulator; CMOS technology; Circuit simulation; Doping; FinFETs; Microelectronics; Semiconductor process modeling; Thickness control; Threshold voltage; Virtual manufacturing; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
ISSN
1930-8868
Print_ISBN
0-7803-9058-X
Type
conf
DOI
10.1109/VTSA.2005.1497105
Filename
1497105
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