Title :
Compact modeling of FinFETs featuring independent-gate operation mode
Author :
Lin, C.H. ; Dunga, M. ; Balasubramanian, S. ; Niknejad, A.M. ; Hu, C. ; Xi, X. ; He, J. ; Chang, L. ; Williams, R.Q. ; Ketchen, M.B. ; Haensch, W.E. ; Chan, M.
Author_Institution :
Dept. of EECS, Univ. of California at Berkeley, CA, USA
Abstract :
This paper describes the concept of the dynamic VTH control in the compact modeling of FinFET. The model is implemented into Berkeley SPICE3 and verified with multiple-dimensional device simulator.
Keywords :
SPICE; circuit simulation; field effect transistors; semiconductor device models; voltage control; FinFET; SPICE3; compact modeling; dynamic VTH control; field effect transistor; independent-gate operation mode; multiple-dimensional device simulator; CMOS technology; Circuit simulation; Doping; FinFETs; Microelectronics; Semiconductor process modeling; Thickness control; Threshold voltage; Virtual manufacturing; Voltage control;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497105
