Title :
High-k technology towards EOT < 1.0 nm
Author :
Arikado, Tsunetoshi
Author_Institution :
Tokyo Electron Ltd., Nirasaki, Japan
Abstract :
In this paper, the author discusses the performance of Hf silicate developed in Selete (the Japanese semiconductor manufacturers consortium, of which the author was a member) and the problem of adapting this material to manufacturing including the extension towards EOT < 1.0 nm.
Keywords :
dielectric materials; hafnium compounds; nanotechnology; semiconductor device manufacture; silicon compounds; Hf silicate; dielectric material; high-k dielectric technology; Charge carrier processes; Electron mobility; Feeds; Hafnium; High K dielectric materials; High-K gate dielectrics; Impurities; MOCVD; Pulp manufacturing; Semiconductor device manufacture;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497107
