DocumentCode
1732114
Title
High-k technology towards EOT < 1.0 nm
Author
Arikado, Tsunetoshi
Author_Institution
Tokyo Electron Ltd., Nirasaki, Japan
fYear
2005
Firstpage
126
Lastpage
127
Abstract
In this paper, the author discusses the performance of Hf silicate developed in Selete (the Japanese semiconductor manufacturers consortium, of which the author was a member) and the problem of adapting this material to manufacturing including the extension towards EOT < 1.0 nm.
Keywords
dielectric materials; hafnium compounds; nanotechnology; semiconductor device manufacture; silicon compounds; Hf silicate; dielectric material; high-k dielectric technology; Charge carrier processes; Electron mobility; Feeds; Hafnium; High K dielectric materials; High-K gate dielectrics; Impurities; MOCVD; Pulp manufacturing; Semiconductor device manufacture;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
ISSN
1930-8868
Print_ISBN
0-7803-9058-X
Type
conf
DOI
10.1109/VTSA.2005.1497107
Filename
1497107
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