Title :
Effects of interstitial oxygen defects at HfOxNy/Si(111) interface on current conduction and charge trapping of MOS devices
Author :
Cheng, Chin-Lung ; Chang-Liao, Kuei-Shu ; Wang, Tien-Ko
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Low interstitial oxygen [Oi] defects at the Si surface were formed by combination of rapid thermal/furnace annealing. The trap energy level involved in Frenkel-Pool conduction was estimated to be around 0.5 eV. Smaller gate leakage current, SILC and defect generation rate, but higher TM, attributable to the decrease of [Oi] defect concentration at the HfOxNy/Si interface, were observed.
Keywords :
MIS devices; energy states; hafnium compounds; interstitials; leakage currents; rapid thermal annealing; silicon; Frenkel-Pool conduction; HfON-Si; MOS devices; SILC; Si(111) interface; charge trapping; current conduction; interstitial oxygen defects; leakage current; rapid thermal/furnace annealing; trap energy level; Current density; Dielectric substrates; Energy states; Hafnium oxide; Leakage current; MOS devices; Oxygen; Petroleum; Rapid thermal annealing; Temperature;
Conference_Titel :
VLSI Technology, 2005. (VLSI-TSA-Tech). 2005 IEEE VLSI-TSA International Symposium on
Print_ISBN :
0-7803-9058-X
DOI :
10.1109/VTSA.2005.1497111
