Title :
Measurement of the silicon resistivity at very high temperature with junction isolated van der Pauw structures
Author :
Corvasce, C. ; Ciappa, M. ; Barlini, D. ; Illien, F. ; Fichtner, W.
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
The limits of the traditional experiment approach to extract resistivity in junction-isolated samples are discussed basing both on physical simulations and on extensive experimental data. Several optimization criteria to design van der Pauw resistors and a related characterization procedure are proposed and experimentally validated in order to extend the extraction of the resistivity up to 500°C.
Keywords :
calibration; electrical resistivity; electrostatic discharge; resistors; silicon; ESD; TCAD calibration; junction isolated van der Pauw structures; optimization criteria; resistivity extraction; silicon resistivity measurement; van der Pauw resistors; van der Pauw technique; Conductivity; Density estimation robust algorithm; Electrical resistance measurement; Failure analysis; Predictive models; Resistors; Robustness; Silicon; Temperature distribution; Testing;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2004. IMTC 04. Proceedings of the 21st IEEE
Print_ISBN :
0-7803-8248-X
DOI :
10.1109/IMTC.2004.1351013
