Title :
Temperature-scaling theory for deep-submicron MOSFET operated at low temperature
Author :
Masu, Kazuya ; Yi, You-Wen ; Tsubouchi, Kazuo ; Mikoshiba, Nobuo
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
The authors propose a novel temperature-scaling law (TSL) for an optimum design of a deep-submicron MOSFET operated at low temperature. A device simulation confirms that current-voltage characteristics are scaled down in proportion to the operation temperature while the distribution of the mobile carrier is kept constant. On the basis of the TSL, the supply voltage at 77 K should be 5 V/4=1.25 V. The optimum supply voltage should be 1.3-1.5 V, considering the noise margin. For the deep submicron MOSFET in which the drift velocity is saturated, both the delay time and the power-delay product can be reduced under the TSL. It is shown that the TSL can improve both the delay time and the power-delay product above 50 K
Keywords :
carrier density; cryogenics; delays; insulated gate field effect transistors; semiconductor device models; 1.25 V; 1.3 to 1.5 V; 77 K; current-voltage characteristics; deep-submicron MOSFET; delay time; device simulation; low temperature operation; mobile carrier distribution; noise margin; optimum supply voltage; power-delay product; temperature-scaling law; Computer simulation; Current-voltage characteristics; Delay effects; Distribution functions; Doping; Electron mobility; Guidelines; MOSFET circuits; Temperature distribution; Threshold voltage;
Conference_Titel :
Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
Conference_Location :
Burlington, VT
DOI :
10.1109/LTSE.1989.50191
