• DocumentCode
    1732714
  • Title

    Design and fabrication of a test chip for 3D integration process evaluation

  • Author

    Song, Chongshen ; Wang, Zheyao ; Liu, Litian

  • Author_Institution
    Inst. of Microelectron., Chinese Acad. of Sci. (IMECAS), Beijing, China
  • fYear
    2011
  • Firstpage
    1764
  • Lastpage
    1769
  • Abstract
    Process compatibility evaluation and mechanical stress test are of great importance for 3D integration processes. This paper presents the design and fabrication of a test chip to evaluate a newly developed 3D integration scheme. For CMOS-compatibility evaluation, individual CMOS devices and integrated circuit modules together with through-silicon-vias (TSVs) are designed. To demonstrate the functionality of 3D integration, CMOS loop oscillators comprising 21 stage CMOS inverters located on two separate device wafers and interconnected with TSVs are designed. Mechanical stresses on the device substrate induced by 3D process are quantitatively evaluated by employing a 16×16 CMOS stress sensor array. The electrical performance of the TSVs is also characterized using special test structures. The test chip and its functions can be used to evaluate different 3D TSV processes.
  • Keywords
    CMOS integrated circuits; integrated circuit design; integrated circuit packaging; integrated circuit testing; logic gates; modules; oscillators; three-dimensional integrated circuits; 3D integration process evaluation; CMOS compatibility evaluation; CMOS devices; CMOS inverter; CMOS loop oscillator; integrated circuit modules; mechanical stress test; mechanical stresses; process compatibility evaluation; test chip design; test chip fabrication; through silicon via; CMOS integrated circuits; Fabrication; MOS devices; Stress; Substrates; Three dimensional displays; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2011 IEEE 61st
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-61284-497-8
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2011.5898751
  • Filename
    5898751