Title :
Floating-gate EEPROM cell: threshold voltage sensibility to geometry
Author :
Portal, J.M. ; Forli, L. ; Née, D.
Author_Institution :
Lab. Materiaux et Microelectronique de Provence, Inst. Charles Fabry, Marseille, France
fDate :
6/24/1905 12:00:00 AM
Abstract :
The objective of this paper is to study the impact of EEPROM cell geometry on the stored value. To do so, a Design Of Experiments (DOE) approach has been used, giving the variations of the threshold voltage of a memory cell as a function of geometric parameters. The inputs of this DOE are transient and static electrical simulations of an EEPROM cell. The simulations´ model is based on a MOS Model 9 transistor coupled with the charges´ neutrality expression in the cell. The outputs of the DOE are a set of equations describing the evolution of the threshold voltage of a virgin, an erase and a written cell. The sensitivity of the threshold voltage to the geometric parameters are then discussed from the results obtain with this set of equations.
Keywords :
EPROM; design of experiments; equivalent circuits; integrated memory circuits; semiconductor device models; DOE approach; EEPROM cell geometry; EEPROM model; MOS Model 9 transistor; charge neutrality expression; design of experiment approach; floating-gate EEPROM cell; geometric parameters; memory cell threshold voltage; static electrical simulations; stored value; threshold voltage sensitivity; transient electrical simulations; EPROM; Electrons; Equations; Geometry; MOSFETs; Nonvolatile memory; Solid modeling; Threshold voltage; Tunneling; US Department of Energy;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1009901
