Title :
Modeling hot-electrons effects in silicon-on-sapphire MOSFETs
Author :
Culurciello, Eugenio ; Andreou, Andreas ; Pouliquen, Philippe
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
fDate :
6/24/1905 12:00:00 AM
Abstract :
A unified, closed form analytical drain current model for partially and fully depleted SOS MOSFETs was investigated. The analytical model was developed using first order principles of operation of the device and basic explanation of the physical constraints responsible for hot carriers effects. The approach solved for the channel field to find closed form solutions for the critical voltages giving rise to kink effects and output nonlinearities. The reliability of the model was addressed and verified with experimental data.
Keywords :
MOSFET; hot carriers; semiconductor device models; silicon-on-insulator; Si-Al2O3; analytical model; channel field; critical voltage; drain current; fully-depleted SOS MOSFET; hot electron effect; kink effect; output nonlinearity; partially-depleted SOS MOSFET; silicon-on-sapphire MOSFET; Acceleration; Analog circuits; Analytical models; Hot carrier effects; Impact ionization; MOS devices; MOSFETs; Semiconductor thin films; Silicon on insulator technology; Voltage;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1009904
