DocumentCode
1733301
Title
Modeling hot-electrons effects in silicon-on-sapphire MOSFETs
Author
Culurciello, Eugenio ; Andreou, Andreas ; Pouliquen, Philippe
Author_Institution
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Volume
1
fYear
2002
fDate
6/24/1905 12:00:00 AM
Abstract
A unified, closed form analytical drain current model for partially and fully depleted SOS MOSFETs was investigated. The analytical model was developed using first order principles of operation of the device and basic explanation of the physical constraints responsible for hot carriers effects. The approach solved for the channel field to find closed form solutions for the critical voltages giving rise to kink effects and output nonlinearities. The reliability of the model was addressed and verified with experimental data.
Keywords
MOSFET; hot carriers; semiconductor device models; silicon-on-insulator; Si-Al2O3; analytical model; channel field; critical voltage; drain current; fully-depleted SOS MOSFET; hot electron effect; kink effect; output nonlinearity; partially-depleted SOS MOSFET; silicon-on-sapphire MOSFET; Acceleration; Analog circuits; Analytical models; Hot carrier effects; Impact ionization; MOS devices; MOSFETs; Semiconductor thin films; Silicon on insulator technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN
0-7803-7448-7
Type
conf
DOI
10.1109/ISCAS.2002.1009904
Filename
1009904
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