A novel method for characterizing degradation of MOSFETs caused by hot-carriers

Author

Acovic, Alexandre ; Dutoit, Michel ; Ilegems, Marc

Author_Institution

Inst. for Micro- & Optoelectron., ETH, Lausanne, Switzerland

fYear

1989

Firstpage

118

Lastpage

122

Abstract

A novel method for characterizing HC (hot carrier) degradation in MOSFETs, based on the measurement of the field-induced drain-substrate tunnel diode at 77 K, is proposed. This method is applied to MOSFETs stressed at 300 K and 77 K. The measurements demonstrate the creation of interface states directly above the n⁺ zone in NMOSFETs and trapped negative charge in its vicinity. In PMOSFETs damage occurs closer to the channel. It is also shown that the greater degradation of the electrical characteristics of NMOSFETs during HC stress at low temperature is not solely due to the increased effective damage (interface states or trapped charge), but is also due to the increased effects of a given damage

Keywords

electron traps; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device testing; 300 K; 77 K; MOSFETs; NMOSFETs; PMOSFETs; electrical characteristics; field-induced drain-substrate tunnel diode; hot carrier degradation characterisation; interface states; n⁺ zone; trapped negative charge; Charge measurement; Current measurement; Degradation; Diodes; Electric variables; Hot carriers; Interface states; MOSFETs; Stress measurement; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on

Conference_Location

Burlington, VT

Type

conf

DOI

10.1109/LTSE.1989.50194

Filename

50194