Title :
A compact analytical current model including traps effects for GS DG MOSFETs
Author :
Bentercia, T. ; Djeffal, F. ; Abdi, M.A. ; Arar, D.
Author_Institution :
Dept. of Electron., Univ. of Batna, Batna, Algeria
Abstract :
Due to the excellent control of DG MOSFETs over the short channel effects, they have been considered as a leading candidate to extend the scaling limit of conventional bulk MOSFETs. However, the hot carrier injection into gate oxides remains a potential problem in reliability field hence altering the device lifetime. In the present paper, a comprehensive drain current model incorporating hot-carrier-induced degradation effect is developed, the derivation is carried out based on some assumptions regarding threshold voltage and mobility. Using obtained model, we have studied the utility of adding a high-k layer into the device structure for which an improvement is detected, the accuracy and efficiency make our analytic current-voltage model for DG MOSFETs suitable for circuit simulation programs.
Keywords :
MOSFET; circuit simulation; hot carriers; semiconductor device models; semiconductor device reliability; GS DG MOSFET; circuit simulation programs; compact analytical current model; gate oxides; high-k layer; hot carrier injection; reliability; short channel effects; trap effects; Analytical models; Degradation; High K dielectric materials; Hot carriers; Integrated circuit modeling; Logic gates; MOSFETs;
Conference_Titel :
Symbolic and Numerical Methods, Modeling and Applications to Circuit Design (SM2ACD), 2010 XIth International Workshop on
Conference_Location :
Gammath
Print_ISBN :
978-1-4244-6816-4
DOI :
10.1109/SM2ACD.2010.5672338
