An analytical drain current model for GS GAA MOSFET including interfacial traps

It´s widely recognized that Gate-All-Around (GAA) MOSFETs are considered among the most probable choices to continue CMOS performance boost beyond the conventional scaling frontiers. Such device offers the best controllability of short-channel effects claimed to be the predominant factor limiting how far the downscaling can be achieved. However, the lack of analytic compact models for degraded drain current can easily be notified in literature. Therefore, in this work we investigate the immunity of GAA MOSFET against the hotcarrier-induced degradation effect after considering the step-function approximation for interface charge distribution. The importance of including a high-k layer into the device architecture is also studied; the damaged device model presented in this work provides a simple and accurate approach for simulating the circuit behavior after hot-carrier damage.