Title :
Impact of floating the well contact on the low temperature kink in n-channel CMOS transistors
Author :
Kasley, Kathy L. ; Oleszek, Gerald M. ; Anderson, Richard L.
Author_Institution :
Dept. of Electr. Eng., Colorado Univ., Colorado Springs, CO, USA
Abstract :
The effect of electrically floating the well on the low-temperature kink in n-channel CMOS transistors was investigated experimentally. Id-Vd (drain current-drain voltage) curves at 13 K with the well grounded and with the well floating were obtained. The low-temperature kink in the I d-Vd characteristics of n-channel CMOS transistors was found to be affected by the contact of the well. When the well contact is floated, only the first Id- Vd trace displays a kink and hysteresis. Subsequent curves show little, if any, kink, but are consistent with the after-kink drain currents measured with the well contact grounded
Keywords :
cryogenics; insulated gate field effect transistors; 13 K; I-V characteristics; after-kink drain currents; drain current drain voltage curves; hysteresis; low temperature kink; n-channel CMOS transistors; well contact floating; Displays; Land surface temperature; Length measurement; MOSFETs; Potential well; Semiconductor device packaging; Springs; Temperature control; Temperature dependence; Voltage;
Conference_Titel :
Low Temperature Semiconductor Electronics, 1989., Proceedings of the Workshop on
Conference_Location :
Burlington, VT
DOI :
10.1109/LTSE.1989.50196
